Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE

The high-quality semi-polar (11-22) AlN thin films were grown on m -plane sapphire substrates by hydride vapor phase epitaxy (HVPE). surface morphology and crystalline quality of the film greatly influenced growth temperature substrate miscut angle. As increased, grain size increased density decreased. In addition, higher also resulted in smaller values full width at half maximum (FWHM) X-ray rocking curves (XRC) when was more than 1,460 °C. At high 1,530 °C, introduction 1° -off angle to smooth surface, low stacking faults FWHM XRC. misfit dislocation calculated from tilt epilayer measured reciprocal space mappings along [−1−123] AlN. sample 6.7 × 10 5 cm −2 . improvement crystal is believed be due enhancement adatom mobility temperatures appropriate variation.